1Motorola Bipolar Power Transistor Device Data
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1Motorola Bipolar Power Transistor Device Data . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎ ÎÎÎÎ Symbol ÎÎÎÎ ÎÎÎÎ Value ÎÎ ÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage ÎÎÎÎ VCEO ÎÎÎÎ 60 ÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage ÎÎÎÎ VCER ÎÎÎÎ 70 ÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage ÎÎÎÎ VCB ÎÎÎÎ 100 ÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage ÎÎÎÎ VEB ÎÎÎÎ 7 ÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous ÎÎÎÎ ÎÎÎÎ IC ÎÎÎÎ ÎÎÎÎ 15 ÎÎ ÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎ IB ÎÎÎÎ 7 ÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25C Derate above 25C ÎÎÎÎ PD ÎÎÎÎ 115 0.657 ÎÎ Watts W/C ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range ÎÎÎÎ ÎÎÎÎ TJ, Tstg ÎÎÎÎ ÎÎÎÎ –65 to +200 ÎÎ ÎÎ C THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic ÎÎÎÎ ÎÎÎÎ Symbol ÎÎÎÎ ÎÎÎÎ Max ÎÎ ÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case ÎÎÎÎ R?JC ÎÎÎÎ 1.52 ÎÎ C/W 160 0 0 25 50 75 100 125 150
- îîîî
- area curves indicate
- voltage —
- area
- bipolar power
- îîî
- safe operating
- any products
- indicate
- current
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Order this document
by 2N3055/DSEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose switching and amplifier applications.
*Motorola Preferred Device
• DC Current Gain — h = 20–70 @ I = 4 AdcFE C
• Collector–Emitter Saturation Voltage — 15 AMPERE
V = 1.1 Vdc (Max) @ I = 4 Adc POWER TRANSISTORSCE(sat) C
• Excellent Safe Operating Area COMPLEMENTARY
SILICON
60 VOLTS
MAXIMUM RATINGS 115 WATTS
Rating Symbol Value Unit
Collector–Emitter Voltage V 60 VdcCEO
Collector–Emitter Voltage V 70 VdcCER
Collector–Base Voltage V 100 VdcCB
Emitter–Base Voltage V 7 VdcEB
Collector Current — Continuous I 15 Adc CASE 1–07C
TO–204AA
Base Current I 7 AdcB (TO–3)
P 115 WattsTotal Power Dissipation @ T = 25 C DC
0.657Derate above 25 C W/ C
Operating and Storage Junction Temperature T , T –65 to +200 CJ stg
Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R 1.52 C/WJC
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
T , CASE TEMPERATURE (°C)C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995 1Motorola Bipolar Power Transistor Device Data
