2N2218 2N2219 2N2221 2N2222
5
pages
English
Documents
Obtenez un accès à la bibliothèque pour le consulter en ligne En savoir plus
Découvre YouScribe en t'inscrivant gratuitement
Découvre YouScribe en t'inscrivant gratuitement
5
pages
English
Documents
Obtenez un accès à la bibliothèque pour le consulter en ligne En savoir plus
Niveau: Secondaire, Lycée
2N2218-2N2219 2N2221-2N2222 January 1989 HIGH-SPEED SWITCHES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE = 0) 60 V VCEO Collector-emitter Voltage (IB = 0) 30 V VEBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 0.8 A Pto t Total Power Dissipation at T amb ≤ 25 °C for 2N2218 and 2N2219 for 2N2221 and 2N2222 at Tcas e ≤ 25 °C for 2N2218 and 2N2219 for 2N2221 and 2N2222 0.8 0.5 3 1.8 W W W W T stg Storage Temperature – 65 to 200 °C T j Junction Temperature 175 °C DESCRIPTION TO-18TO-39 INTERNAL SCHEMATIC DIAGRAM 2N2218/2N2219 approved to CECC 50002- 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages.
Voir
2N2218-2N2219 2N2221-2N2222 January 1989 HIGH-SPEED SWITCHES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE = 0) 60 V VCEO Collector-emitter Voltage (IB = 0) 30 V VEBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 0.8 A Pto t Total Power Dissipation at T amb ≤ 25 °C for 2N2218 and 2N2219 for 2N2221 and 2N2222 at Tcas e ≤ 25 °C for 2N2218 and 2N2219 for 2N2221 and 2N2222 0.8 0.5 3 1.8 W W W W T stg Storage Temperature – 65 to 200 °C T j Junction Temperature 175 °C DESCRIPTION TO-18TO-39 INTERNAL SCHEMATIC DIAGRAM 2N2218/2N2219 approved to CECC 50002- 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages.
- singapore - spain - sweden - switzerland - taiwan - thailand - united
- emitter-base voltage
- collector
- emitter saturation
DESCRI PTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-con planarepitaxial NPN transistorsin Jedec TO-39 (for2N2218 and2N2219) and in Jedec TO-18 (for 2N2221and 2N2222)metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use-ful current gain over a wide range of collector cur-rent, low leakagecurrents and low saturation volt-ages.
2N2218/2N2219 approved to CECC50002-100, 2N2221/2N2222 approved to CECC 50002-101 available on request.
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCB O(ICollector-base VoltageE= 0) V Collector-emitterVoltage (I= 0) CE OB V Emitter-baseVoltage (I= 0) E B OC ICCollector Current Pt o tTotal Power Dissipation at Ta mb325°C for2N2 21 8and2 N22 19 for2N2 22 1and2 N22 22 at Tc as e325°C for2N2 21 8and2 N22 19 for2N2 22 1and2 N22 22 Ts t gStorage Temperature TjJunction Temperature
January 1989
2N2218-2N2219 2N2221-2N2222
HIGH-SPEED SWITCHES
TO-39
TO-18
INTERNAL SCHEMATIC DIAGRAM
Val ue 60 30 5 0.8
Unit V V V A
0.8 W 0.5 W 3 W 1.8 W ± 65 to 200°C 175°C
1/5
